Application of multi-lateral double diffused field ring in ultrahigh-voltage device MOS transistor design

Author

Shaoming, Yang ; Sheu Gene ; Jiaming, Guo ; Ruey, Tasi Jung

Author_Institution

Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan

Volume

1

fYear

2011

Firstpage

85

Lastpage

88

Abstract

A novel ultrahigh-voltage device with multi-lateral double diffused field ring in reduced surface field (RESURF) lateral double-diffused MOS (LDMOS) transistor in junction-isolated power IC technology is developed and successfully simulated. The multiple rings of P+ implant used linearly p-top mask design to form multi-lateral diffused field ring to cause many depletion regions. Due to charge balance effect, the multiple p-top rings makes the doping concentration of the N-drift region increased to cause the specific on-resistance reduced. The proposed multiple p-top rings RESURF LDMOS device is able to achieve a specific on-resistance of lower than 144.7 mΩcm² while maintaining a breakdown voltage of over 800 volts.

Keywords

MOSFET; doping profiles; masks; power integrated circuits; N-drift region; charge balance effect; doping concentration; junction-isolated power IC technology; lateral double-diffused MOS transistor; linearly p-top mask; multilateral double diffused field ring; multiple p-top rings; reduced surface field; ultrahigh-voltage device; Doping; Electric fields; Instruments; Periodic structures; Semiconductor process modeling; Structural rings; Transistors; LDMOS; RESURF; charge balance; linear p-top rings; on-resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Measurement & Instruments (ICEMI), 2011 10th International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-8158-3

Type

conf

DOI

10.1109/ICEMI.2011.6037685

Filename

6037685