Measurement of a complete HV IGBT I-V-characteristic up to the breakdown point

Author

Basler, Thomas ; Bhojani, Riteshkumar ; Lutz, Josef ; Jakob, Roland

Author_Institution

Dept. of Power Electron. & EMC, CHEMNITZ Univ. of Technol., Chemnitz, Germany

fYear

2013

Firstpage

1

Lastpage

9

Abstract

This paper describes how to measure the complete output characteristic of a high-voltage IGBT non-destructively up to the breakdown point and beyond. Hereby, a deep knowledge of the IGBT behaviour at high voltages and saturation currents is gained. To construct the complete characteristic, short-circuit and curve-tracer measurements are combined. The results are compared and recapitulated with semiconductor simulations of IGBT models fitted to experimental characteristics.

Keywords

electric breakdown; insulated gate bipolar transistors; measurement systems; semiconductor device measurement; breakdown point; complete HV IGBT I-V-characteristics; curve-tracer measurement; saturation current; semiconductor simulation; short-circuit measurement; Current measurement; Electric breakdown; Insulated gate bipolar transistors; Semiconductor device measurement; Semiconductor process modeling; Temperature measurement; Voltage measurement; Device simulation; IGBT; MOS device; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE), 2013 15th European Conference on

Conference_Location

Lille

Type

conf

DOI

10.1109/EPE.2013.6634454

Filename

6634454