DocumentCode
1585792
Title
Novel high-performance pressure sensors using double SOI structures
Author
Chung, G.-S. ; Kawahito, S. ; Ashiki, M. ; Ishida, M. ; Nakamura, T.
Author_Institution
Dept. of Electr. & Electron. Eng., Toyohashi Univ., of Technol., Japan
fYear
1991
Firstpage
676
Lastpage
681
Abstract
High-performance pressure sensors using
Keywords
electric sensing devices; epitaxial growth; epitaxial layers; etching; integrated circuit technology; piezoelectric transducers; pressure transducers; semiconductor technology; semiconductor-insulator boundaries; 700 mmHg; Raman Spectroscopy; Si; Si-Al/sub 2/O/sub 3/-Si-SiO/sub 2/-Si; Si:B; anisotropic etching; diaphragm thickness; dielectrically isolated piezoresistor; direct bonding; double SOI structures; epitaxial growth; etch-stop layer; pressure sensors; single-element four-terminal piezoresistor; stress distribution; Anisotropic magnetoresistance; Bonding; Dielectrics; Epitaxial growth; Etching; Isolation technology; Piezoresistance; Stress; Substrates; Thickness control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-87942-585-7
Type
conf
DOI
10.1109/SENSOR.1991.148971
Filename
148971
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