• DocumentCode
    1586415
  • Title

    TiN and ZrN based ohmic contacts to n-GaN

  • Author

    Mohney, S.E. ; Luther, B.P. ; Wolter, S.D. ; Jackson, T.N. ; Karlicek, R.F., Jr. ; Kern, R.S.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    1998
  • Firstpage
    134
  • Lastpage
    137
  • Abstract
    Metal electrical contacts that exhibit good thermal stability and desirable electrical characteristics are required for the development of high temperature devices based on the III-V nitrides. To make improvements on existing contacts or to develop new ones, information on the metallurgy of these contacts is needed. In this work, selected early transition metal-based ohmic contacts to n-GaN are examined from both a high-temperature materials chemistry and electrical standpoint
  • Keywords
    III-V semiconductors; annealing; gallium compounds; ohmic contacts; thermal stability; titanium compounds; zirconium compounds; GaN-TiN; GaN-ZrN; III-V nitride; annealing; electrical characteristics; high temperature device; materials chemistry; metallurgy; n-GaN; ohmic contact; thermal stability; transition metal; Annealing; Argon; Contact resistance; Gallium nitride; Laboratories; Ohmic contacts; Temperature; Thermodynamics; Tin; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    0-7803-4540-1
  • Type

    conf

  • DOI
    10.1109/HITEC.1998.676774
  • Filename
    676774