DocumentCode
1586415
Title
TiN and ZrN based ohmic contacts to n-GaN
Author
Mohney, S.E. ; Luther, B.P. ; Wolter, S.D. ; Jackson, T.N. ; Karlicek, R.F., Jr. ; Kern, R.S.
Author_Institution
Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
fYear
1998
Firstpage
134
Lastpage
137
Abstract
Metal electrical contacts that exhibit good thermal stability and desirable electrical characteristics are required for the development of high temperature devices based on the III-V nitrides. To make improvements on existing contacts or to develop new ones, information on the metallurgy of these contacts is needed. In this work, selected early transition metal-based ohmic contacts to n-GaN are examined from both a high-temperature materials chemistry and electrical standpoint
Keywords
III-V semiconductors; annealing; gallium compounds; ohmic contacts; thermal stability; titanium compounds; zirconium compounds; GaN-TiN; GaN-ZrN; III-V nitride; annealing; electrical characteristics; high temperature device; materials chemistry; metallurgy; n-GaN; ohmic contact; thermal stability; transition metal; Annealing; Argon; Contact resistance; Gallium nitride; Laboratories; Ohmic contacts; Temperature; Thermodynamics; Tin; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location
Albuquerque, NM
Print_ISBN
0-7803-4540-1
Type
conf
DOI
10.1109/HITEC.1998.676774
Filename
676774
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