Monitoring of heavy metals in as-implanted SIMOX with surface photovoltage

Author

Jastrzebski, L. ; Soydan, R.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

fYear

1988

Firstpage

27

Abstract

Summary form only given. Surface photovoltage (SPV) was used successfully to measure the iron concentration in as-implanted SIMOX (separation by implanted oxygen) materials. An initial correlation has been established between diffusion lengths measured on the back of SIMOX wafers and Fe concentration measured by SIMS (secondary ion mass spectrometry) and spark source in as-implanted SIMOX films. The SPV measurements are quick, nondestructive, and do not require any additional sample preparation. Therefore, they could be used easily as a quality control method to monitor heavy metals in as-implanted SIMOX layers

Keywords

ion implantation; nondestructive testing; quality control; semiconductor technology; Fe concentration; NDE; NDT; SIMS; SPV measurements; Si-SiO₂-Si; as-implanted SIMOX films; as-implanted SIMOX layers; diffusion lengths; heavy metals monitoring; monitor heavy metals; nondestructive measurement; process control; quality control method; secondary ion mass spectrometry; separation by implanted oxygen; spark source; surface photovoltage measurements; Calibration; Contamination; Impurities; Ion beams; Iron; Length measurement; Monitoring; Pollution measurement; Semiconductor device modeling; Sparks;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE

Conference_Location

St. Simons Island, GA

Type

conf

DOI

10.1109/SOI.1988.95402

Filename

95402