• DocumentCode
    158760
  • Title

    The impact of inrush current on field emission current of vacuum interrupters during capacitive current switching

  • Author

    Yongxiang Yu ; Jianhua Wang ; He Yang ; Yingsan Geng ; Zhiyuan Liu

  • Author_Institution
    State Key Lab. of Electr. Insulation & Power Equip., Xi´an Jiaotong Univ., Xi´an, China
  • fYear
    2014
  • fDate
    Sept. 28 2014-Oct. 3 2014
  • Firstpage
    145
  • Lastpage
    148
  • Abstract
    According to the relevant IEC standards, the back-to-back capacitor banks switching tests need to withstand an inrush current of 20 kA (peak) with 4250 Hz frequency. For vacuum interrupters (VIs), the contact surfaces may be seriously damaged by the high inrush current. The objective of this paper is to investigate how the inrush current influences the field emission current of VIs under power-frequency voltage. The amplitudes of the inrush current were set as 10 and 20 kA. The samples VIs suffered the inrush current of different amplitudes twice consecutively. Then, the field emission current of VIs was measured by applying a power frequency voltage upon the contact gap of 1 mm. The experimental results show that the field emission current is unsymmetrical in contrast with the power frequency voltage´s polarity. There is a critical voltage value that the applied voltage exceeds it can make the field emission current increase significantly. Besides, the more times of imposing inrush current on the contacts and higher inrush current will lead to a higher field emission current.
  • Keywords
    field emission; vacuum interrupters; capacitive current switching; contact gap; current 20 kA; field emission current; frequency 4250 Hz; inrush current; power-frequency voltage; size 1 mm; vacuum interrupters; Current measurement; Frequency measurement; Insulation; Interrupters; Surges; Switches; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Discharges and Electrical Insulation in Vacuum (ISDEIV), 2014 International Symposium on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4799-6750-6
  • Type

    conf

  • DOI
    10.1109/DEIV.2014.6961640
  • Filename
    6961640