• DocumentCode
    158998
  • Title

    Design of a 5-MHz-gate-driver for SiC-MOSFETs

  • Author

    Haehre, Karsten ; Simon, Carsten ; Wild, Barbara ; Kling, Rainer ; Heering, W.

  • Author_Institution
    Light Technol. Inst. (LTI), Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany
  • fYear
    2014
  • fDate
    8-10 April 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    This paper presents the design procedure of a gate drive circuit for driving Silicon Carbide (SiC) MOSFETs at switching frequencies up to fsw = 5MHz. Such high switching frequencies are required in the field of plasma generation and inductive heating. Therefore, this work both analyses the demand of gate drive power needed for different power semiconductors and proposes a possible solution on how to implement a gate driver especially for SiC MOSFETs.
  • Keywords
    driver circuits; power MOSFET; silicon compounds; MOSFET; SiC; frequency 5 MHz; gate drive circuit; inductive heating; plasma generation; power semiconductors;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics, Machines and Drives (PEMD 2014), 7th IET International Conference on
  • Conference_Location
    Manchester
  • Electronic_ISBN
    978-1-84919-815-8
  • Type

    conf

  • DOI
    10.1049/cp.2014.0401
  • Filename
    6836834
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=158998