Modeling and Characterization of Schottky Diode on AlGaAs/GaAs HEMT Structure for Rectenna Device

Author

Parimon, Norfarariyanti Bte ; Yusof, Siti Suhaila Bte Mohd ; Bin Hashim, A.M.

Author_Institution

Mater. Innovations & Nano-Electron. (MINE) Group, Univ. Teknol. Malaysia, Skudai

fYear

2008

Firstpage

987

Lastpage

989

Abstract

The modeling and characterization of Schottky diode on AlGaAs/GaAs HEMT structure for rectenna device is presented. The rectenna device can be used as a wireless power supply where it can capture microwave power and convert to the dc power to generate the others devices or circuits on a chip. Design and simulation of Schottky diode on AlGaAs/GaAs HEMT structure was carried out. From the simulated results, it was found that the operating frequency of the Schottky diode is tunable based on the length of coplanar waveguide.

Keywords

Schottky diodes; aluminium compounds; gallium compounds; high electron mobility transistors; rectennas; AlGaAs-GaAs; HEMT structure; Schottky diode; coplanar waveguide; rectenna device; Circuit simulation; DC generators; Gallium arsenide; HEMTs; Microwave devices; Microwave generation; Power generation; Power supplies; Rectennas; Schottky diodes; HEMT structure; IQ chip; Rectenna; Schottky diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Modeling & Simulation, 2008. AICMS 08. Second Asia International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-0-7695-3136-6

Electronic_ISBN

978-0-7695-3136-6

Type

conf

DOI

10.1109/AMS.2008.187

Filename

4530611