Modeling and Characterization of Capacitively Coupled Interdigital-Gated HEMT Plasma Device for Terahertz Wave Amplification

Author

Ahir, Zon Fazlila Mohd ; Zulkifli, Ahmad Zarif ; Hashim, Ahmad Mustafa

Author_Institution

Mater. Innovations & Nano-Electron. Res. Group, Univ. Teknol. Malaysia, Skudai

fYear

2008

Firstpage

990

Lastpage

993

Abstract

A capacitively coupled interdigital-gated HEMT structure was used to investigate the occurrence of uniformity of electric field distribution along the structure. The structure was designed and simulated using Commercial Electromagnetic Sonnet Suites software. The return loss characteristics were analyzed and evaluated. The comparison of the admittance characteristics from simulation between dc connected structure and capacitively coupled structure is carried out in order to evaluate electromagnetic wave propagation. This structure kept uniform electric field in the channel when the dc biased is applied to the interdigital gate, which modulates the potential in the channel.

Keywords

circuit simulation; high electron mobility transistors; plasma devices; Commercial Electromagnetic Sonnet Suites software; admittance characteristics; coupled interdigital-gated HEMT plasma device; electric field distribution; electromagnetic wave propagation; return loss characteristics; terahertz wave amplification; Admittance; Dielectric substrates; Electromagnetic devices; Electromagnetic scattering; Frequency; Gallium arsenide; HEMTs; Plasma devices; Plasma waves; Space technology; HEMT; Interdigital; Negative conductance; Plasma wave; Terahertz;

fLanguage

English

Publisher

ieee

Conference_Titel

Modeling & Simulation, 2008. AICMS 08. Second Asia International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-0-7695-3136-6

Electronic_ISBN

978-0-7695-3136-6

Type

conf

DOI

10.1109/AMS.2008.185

Filename

4530612