• DocumentCode
    1590076
  • Title

    Effect of Mn doping on the structural and optical properties of ZnO films

  • Author

    Rashid, A.R.A. ; Menon, P.S.

  • Author_Institution
    Inst. of Microengineering & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia
  • fYear
    2010
  • Firstpage
    79
  • Lastpage
    82
  • Abstract
    Undoped and Mn doped ZnO films with different doping concentration were synthesized by sol gel method using a spin coating technique. Zn1-xMnxO thin films are prepared using 2-methoxyethanol solution of zinc acetate dehydrate and manganese acetate tetrahydrate. The solution was stabilized by MEA. The quantity of Mn in the sol was varied from x = 0, 0.02 and 0.04 with annealing temperature of 700°C. The samples were characterized using AFM to investigate the surface morphology and nanostructures. The XRD analysis shows the crystalline structure and orientation of the films. The films exhibit hexagonal wurtzite structure and improved crystalline quality by increasing the Mn doping. Meanwhile, the optical properties were characterized using UV-Vis where the transmittance and band gap decreases upon increment of Mn concentration.
  • Keywords
    II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; crystal orientation; crystal structure; light transmission; manganese; optical constants; semiconductor doping; semiconductor growth; semiconductor thin films; sol-gel processing; spin coating; surface morphology; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; 2-methoxyethanol solution; AFM; UV-Vis; XRD; Zn1-xMnxO; annealing; band gap; crystalline orientation; crystalline structure; doping; hexagonal wurtzite structure; manganese acetate tetrahydrate; nanostructures; optical properties; sol gel method; spin coating; structural properties; surface morphology; temperature 700 degC; thin films; transmittance; zinc acetate dehydrate; Annealing; Coatings; Crystallization; Doping; Manganese; Optical films; Surface morphology; Temperature; Transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
  • Conference_Location
    Melaka
  • Print_ISBN
    978-1-4244-6608-5
  • Type

    conf

  • DOI
    10.1109/SMELEC.2010.5549430
  • Filename
    5549430