• DocumentCode
    1590600
  • Title

    Electric field gradient dependence of excess avalanche noise

  • Author

    Tan, C.H. ; Plimmer, S.A. ; David, J.P.R. ; Rees, G.J. ; Tozer, R.C. ; Clark, J. ; Grey, R.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • fYear
    1999
  • fDate
    6/21/1905 12:00:00 AM
  • Firstpage
    230
  • Lastpage
    235
  • Abstract
    Electron initiated avalanche noise measurements were performed on two Al0.3Ga0.7As pn+ diodes with p-region doping density Na=1.6×1017 cm-3 and Na=5.0×1017 cm-3 and two Al0.3Ga0.7As p+n structures with n-region doping density Nd=1.0×1017 cm-3 and Nd=4.6×1017 cm-3. The avalanche noise was found to decrease with increasing doping concentration in all structures and was found to be lower in the p+n structures than in the pn+ structures. The results are interpreted in terms of spatial coherence of the ionisation process
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche diodes; gallium arsenide; semiconductor device noise; Al0.3Ga0.7As; avalanche noise; doping concentration; electric field gradient; p+n diode; pn+ diode; Avalanche photodiodes; Diodes; Doping; Electrons; Ionization; Neodymium; Noise measurement; Performance evaluation; Photoconductivity; Signal to noise ratio;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on
  • Conference_Location
    London
  • Print_ISBN
    0-7803-5298-X
  • Type

    conf

  • DOI
    10.1109/EDMO.1999.821490
  • Filename
    821490
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1590600