Energy propagation properties of Al-lossy lines in high-speed circuits on silicon substrate

This paper presents a discussion on the analysis and modelling of energy propagation of Al-interconnects on silicon substrate. A superposition of a DC biasing to the high-speed signal applied to the line is suggested. To provide the characterization of this effect a number of test structures containing a variety of asymmetric transmission lines were prepared. S-parameters data were measured using a vector network analyser and the measured data were compared to theoretical predictions. TEM-wave propagation was considered. The obtained results show a certain change in energy propagation while changing the value of DC biasing voltage. The obtained results suggest a way of controlling the performance and energy propagation of interconnects on semiconductor substrates. The method can be applied to coupled lines as well