Variable-Threshold-Voltage FinFETs with a Control-Voltage Range within the Logic-Level Swing Using Asymmetric Work-Function Double Gates

Author

Uchi, S.O. ; Sakamoto, K. ; Endo, K. ; Masahara, M. ; Matsukawa, T. ; Liu, Y.X. ; Hioki, M. ; Nakagawa, T. ; Sekigawa, T. ; Koike, H. ; Suzuki, E.

Author_Institution

Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba

fYear

2008

Firstpage

18

Lastpage

19

Abstract

This paper presents the V_G1-V_G2 map to identify the state of channels and clarified the performance of 4T-FinFETs as a VT-FET. As a result, we found that the asymmetric work-function DG structure achieves V_th controllability without the S-slope degradation within the V_th-control-voltage range V_SS les V_G2 les V_DD. This control voltage range is a great advantage to simplify the system organization for the power management, which is never realized by the planar bulk devices.

Keywords

MOSFET; work function; asymmetric double gates; four-terminal finFET; logic-level swing; variable threshold voltage; work function; Circuit noise; Degradation; Energy management; FETs; FinFETs; Logic circuits; Nanoelectronics; Threshold voltage; Variable structure systems; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-1614-1

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2008.4530778

Filename

4530778