• DocumentCode
    1593534
  • Title

    The Role of Shallow Trench Isolation on Channel Width Noise Scaling for Narrow Width CMOS and Flash Cells

  • Author

    Lu, Yin-Lung Ryan ; Liao, Yu-Ching ; McMahon, William ; Lee, Yung-Huei ; Kung, Helen ; Fastow, Richard ; Ma, Sean

  • Author_Institution
    Intel Corp., Santa Clara, CA
  • fYear
    2008
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    RTS noise is a growing issue in flash memory as the cell size scales down. By investigating NMOS and Ring devices, it is shown that noise induced by the STI edge dominates cell RTS/noise with scaling or after cycling. Device 1/f characterization highlights the drain STI edge as a critical area for RTS improvement in flash.
  • Keywords
    CMOS integrated circuits; flash memories; isolation technology; 1/f characterization; NMOS; Ring devices; channel width noise scaling; drain STI edge; flash cells; flash memory; narrow width CMOS; shallow trench isolation; CMOS technology; Control systems; Degradation; Educational institutions; Flash memory; MOS devices; Noise measurement; Signal analysis; Telegraphy; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-1614-1
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2008.4530810
  • Filename
    4530810
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1593534