• DocumentCode
    1594181
  • Title

    Anisotropic etching of silicon in (CH/sub 3/)/sub 4/NOH solutions

  • Author

    Tabata, O. ; Asahi, R. ; Funabashi, H. ; Sugiyama, S.

  • Author_Institution
    Toyota Central Res. & Dev. Lab. Inc., Aichi, Japan
  • fYear
    1991
  • Firstpage
    811
  • Lastpage
    814
  • Abstract
    Detailed characteristics of tetramethyl ammoniumhydroxide, (CH/sub 3/)/sub 4/NOH, as silicon anisotropic etching solutions with various concentrations from 5 to 40 wt.% have been studied. The etch rates of
  • Keywords
    elemental semiconductors; etching; semiconductor technology; silicon; 90 C; Si surfaces; anisotropic etching solutions; elemental semiconductor; etch rates; micromachining; n-type; open-circuit potential; p-type; passivation potential; pyramidal-shaped hillocks; tetramethyl ammoniumhydroxide; Anisotropic magnetoresistance; Conductivity; Counting circuits; Electrodes; Etching; Impurities; Platinum; Silicon; Temperature dependence; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-87942-585-7
  • Type

    conf

  • DOI
    10.1109/SENSOR.1991.149007
  • Filename
    149007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1594181