DocumentCode
159422
Title
Modeling of χ(2) in strained silicon based on crystal symmetry
Author
Manganelli, C.L. ; Pintus, P. ; Casu, M.B. ; Andriolli, N. ; Di Pasquale, F.
Author_Institution
Scuola Superiore Sant´Anna, Pisa, Italy
fYear
2014
fDate
27-29 Aug. 2014
Firstpage
65
Lastpage
66
Abstract
The symmetry of the silicon crystal cell under elementary deformation is theoretically investigated. A model exploiting a linear approximation is derived for predicting the behaviour of second-order dielectric susceptibility, providing excellent agreement with experimental results.
Keywords
deformation; electro-optical effects; optical susceptibility; optical waveguides; silicon; Si; elementary deformation; linear approximation; second-order dielectric susceptibility; silicon crystal cell symmetry; Electrooptic effects; Electrooptical waveguides; Lattices; Silicon; Strain; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location
Paris
Print_ISBN
978-1-4799-2282-6
Type
conf
DOI
10.1109/Group4.2014.6962022
Filename
6962022
Link To Document