Advanced numerical and analytical study of the Dyakonov-Shur model for bidimensional electron gas in Field Effect Transistors

More than two decades ago, Dyakonov and Shur described a model predicting the possibility to emit or detect THz radiation by use of a Field Effect Transistor (FET). This model did not take into account any resistive term. The adding of a resistive term to the Dyakonov-Shur system was investigated and it was shown that it increases the stability of the stationary solutions while maintaining the possibility to reach unstable regimes where THz electromagnetic radiation could be emitted by the field effect transistor. The DS system´s stability can be fully characterized by an original numerical algorithm allowing to compute the linear eigenmodes of electron density oscillation in the transistor´s channel which are close to an odd multiple of a fully described fundamental mode.