Simultaneous switching noise and IR drop in graphene nanoribbon power distribution networks

Author

Das, Debaprasad ; Rahaman, Hafizur

Author_Institution

Sch. of VLSI Technol., Bengal Eng. & Sci. Univ., Shibpur, India

fYear

2012

Firstpage

1

Lastpage

6

Abstract

The work in this paper presents the analyses of simultaneous switching noise (SSN) and power supply voltage (IR drop) in graphene nanoribbon (GNR) interconnects for 16 nm technology node. The electrical equivalent model is used to derive the electrical circuit parameters for GNR interconnects. The results are compared with that of traditional copper (Cu) based interconnects. It has been found that the peak SSN in GNR is 41-23% less than that in Cu interconnects. The peak IR drop is 38-34% less in GNR as compared to Cu wires. The propagation delay is critically impacted due to SSN and IR drop. GNR shows up to 64.49% less impact in the delay in comparison to that of Cu based power networks.

Keywords

distribution networks; electric potential; graphene; integrated circuit interconnections; integrated circuit modelling; integrated circuit noise; nanoribbons; switching circuits; GNR interconnects; IR drop; SSN; electrical circuit parameter; electrical equivalent model; graphene nanoribbon power distribution network; power supply voltage; propagation delay; simultaneous switching noise; size 16 nm; Delay; Integrated circuit interconnections; Power supplies; Resistance; Very large scale integration; Graphene nanoribbon (GNR); delay; interconnect; power supply voltage drop (IR drop); simultaneous switching noise (SSN);

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Conference_Location

Birmingham

ISSN

1944-9399

Print_ISBN

978-1-4673-2198-3

Type

conf

DOI

10.1109/NANO.2012.6321893

Filename

6321893