Fully implanted and zero thermal budget technology for silicon based monolithic power integrated circuits

Author

Patti, D. ; Sanfilippo, D.

Author_Institution

STMicroelectronics, Catania, Italy

Volume

4

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

2166

Abstract

A new technology for monolithic smart power circuits has been obtained by the extensive use of ion implantation with a wide range of energy and rapid thermal processes. Using the new technology to realize power devices with comparable or better performance than standard devices employing epitaxial technology is possible. A two micron thick silicon dioxide layer is formed on the wafer. After a photolithographic process, boron is implanted by multiple implantations technique

Keywords

boron; elemental semiconductors; ion implantation; monolithic integrated circuits; power integrated circuits; rapid thermal annealing; silicon; 2 micron; Si:B; fully implanted technology; ion implantation; rapid thermal annealing; silicon based monolithic power integrated circuits; smart power circuits; zero thermal budget technology; Dielectrics and electrical insulation; Epitaxial layers; Implants; Integrated circuit technology; Ion implantation; Isolation technology; Power integrated circuits; Rapid thermal processing; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual

Conference_Location

Vancouver, BC

ISSN

0275-9306

Print_ISBN

0-7803-7067-8

Type

conf

DOI

10.1109/PESC.2001.954441

Filename

954441