Performance of SIMOX transistors at very low temperatures

Author

Elewa, T. ; Balestra, F. ; Cristoloveanu, S. ; Auberton-Hervé, U. ; Davis, J.

Author_Institution

Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France

fYear

1988

Firstpage

77

Abstract

Summary form only given. The authors describe a systematic investigation of SIMOX (separation by implantation of oxygen) MOSFET properties from ambient down to liquid helium temperature. Comparisons are made between n- and p-channel enhancement and depletion-mode MOSFETs fabricated on SIMOX annealed at high (HTA: 1300°C) and low (LTA: 1200°C) temperatures. The behavior of front and back channels in both edgeless and conventional structures is also pointed out

Keywords

cryogenics; field effect integrated circuits; insulated gate field effect transistors; 1200 degC; 1300 degC; 4 to 293 K; HTA; LTA; MOSFET properties; SIMOX transistors; back channels; conventional structures; depletion-mode; edgeless structures; enhancement mode; front channels; high temperature annealing; liquid helium temperature; low temperature annealing; low temperatures; n-channel devices; p-channel devices; Acoustic scattering; Annealing; Cryogenics; Helium; Leakage current; MOSFETs; Silicon; Temperature; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE

Conference_Location

St. Simons Island, GA

Type

conf

DOI

10.1109/SOI.1988.95446

Filename

95446