Multi-domain Gunn diodes with multiple hot electron launchers: a new approach to MM wave GaAs Gunn oscillator optimization

Author

Van Zyl, Robert R. ; Perold, Willem J. ; Botha, Reinhardt

Author_Institution

Dept. of Electr. & Electron. Eng., Stellenbosch Univ., South Africa

Volume

2

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

1193

Abstract

The optimization of millimeter wave Gunn oscillators comprises two avenues, namely the use of heterojunctions for hot electron injection and multidomain operation Gunn diodes. A combination of these two techniques is proposed resulting in multiple hot electron launchers spaced throughout the diode. The results presented here suggest that this configuration proves to be a very promising option which warrants further investigation

Keywords

Gunn diodes; Gunn oscillators; III-V semiconductors; cavity resonators; circuit optimisation; equivalent circuits; gallium arsenide; hot carriers; millimetre wave diodes; millimetre wave oscillators; semiconductor device models; EHF; GaAs; MM-wave GaAs Gunn oscillator optimization; Monte Carlo simulation; heterojunctions; hot electron injection; millimeter-wave Gunn oscillators; multi-domain Gunn diodes; multiple hot electron launchers; Africa; Cathodes; Computational modeling; Diodes; Gallium arsenide; Gunn devices; Heterojunctions; Optical scattering; Oscillators; Secondary generated hot electron injection;

fLanguage

English

Publisher

ieee

Conference_Titel

Africon, 1999 IEEE

Conference_Location

Cape Town

Print_ISBN

0-7803-5546-6

Type

conf

DOI

10.1109/AFRCON.1999.821949

Filename

821949