DocumentCode
1599353
Title
Modeling of vertical and lateral phototransistors using VHDL-AMS
Author
Alexandre, A. ; Pinna, A. ; Granado, B. ; Garda, P.
Volume
1
fYear
2004
Firstpage
142
Abstract
In this paper, to be able to simulate imaging systems containing APS cells including phototransistors, an electric model based on a physical approach was elaborated and it was written in the VHDL-AMS language. It allows the simulation of the spectral response of phototransistors sensibilities and the study of their linearity according to the power of the incident light.
Keywords
bipolar transistors; hardware description languages; photodiodes; phototransistors; VHDL-AMS; bipolar transistor; electric model; imaging systems simulation; incident light; lateral phototransistors; photodiodes; spectral response; vertical phototransistors; Bipolar transistors; CMOS technology; Circuits; Optical polarization; Photoconductivity; Photodetectors; Photodiodes; Phototransistors; Standards development; System-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Technology, 2004. IEEE ICIT '04. 2004 IEEE International Conference on
Conference_Location
Hammamet, Tunisia
Print_ISBN
0-7803-8662-0
Type
conf
DOI
10.1109/ICIT.2004.1490272
Filename
1490272
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