A wafer surface temperature measurement method utilizing the reordering phenomena of amorphous silicon

In the recent years, the importance of relatively low temperatures ranging from 400degC to 600degC is growing for the rapid thermal processes in semiconductor manufacturing. Measurement and evaluation techniques for the temperature distribution on the wafer surface within the manufacturing equipments are essential. Matsushita Electric Industrial Co., SENCorporation and NMIJ/AIST have done research on a novel temperature measurement method for this temperature region that utilizes the reordering phenomena of amorphous silicon, called the REAL method (Really Exposed Temperature Evaluation Using Reordering of Implanted Amorphous Si Layers). In this paper, we present the principle, the advantages, a trial calculation of the measurement uncertainty and the application of the REAL method