DocumentCode
1601508
Title
Resistive switching characteristics of patterned Cr/ZnO/Cr thin film structure
Author
Yoo, E.J. ; Yoon, Tae ; Choi, Y.J. ; Kang, C.J.
Author_Institution
Dept. of Phys., Myongji Univ., Yongin, South Korea
fYear
2012
Firstpage
1
Lastpage
4
Abstract
Current-voltage (I-V) characteristics of the Cr/ZnO/Cr capacitor structure was investigated. A bipolar resistive switching behavior was observed in the patterned structure of Cr/ZnO/Cr. In addition, using Cr coated AFM tip as a top electrode, the electrical characteristics of local area of ZnO/Cr structure was measured and compared with that of capacitor structure.
Keywords
II-VI semiconductors; atomic force microscopy; chromium; electrodes; metal-semiconductor-metal structures; metallic thin films; semiconductor thin films; wide band gap semiconductors; zinc compounds; Cr-ZnO-Cr; Cr-coated AFM tip; atomic force microscopy; bipolar resistive switching behavior; capacitor structure; current-voltage characteristics; electrical characteristics; patterned thin film structure; top electrode; Capacitors; Resists; Switches; Zinc oxide; C-AFM; ZnO; resistive switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location
Birmingham
ISSN
1944-9399
Print_ISBN
978-1-4673-2198-3
Type
conf
DOI
10.1109/NANO.2012.6322094
Filename
6322094
Link To Document