• DocumentCode
    160181
  • Title

    Nano-SiC added Ag paste sintering die-attach for SiC power devices

  • Author

    Hao Zhang ; Nagao, Shijo ; Park, Soojin ; Koga, Shunsuke ; Sugahara, Tohru ; Suganuma, Katsuaki

  • Author_Institution
    Inst. of Sci. & Ind. Res., Osaka Univ., Ibaraki, Japan
  • fYear
    2014
  • fDate
    16-18 Sept. 2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Low temperature and low pressure sintering Ag paste composed by sub-micro Ag particle and organic solvent was presented. The apparent improvement of bonding strength was realized by adding small amount of nano thickness Ag flake. Optimum proportion of sub-micro particle and nano thickness flake was determined. Nano-SiC particles were added into the optimized paste for sake of the possibility of properties advancement. The electrical property of newly developed Ag paste was measured by an improved test method. SiC die attachment and DBC (Direct Bonding Cu) substrate was conducted to test the practical application prospect of newly developed Nano-SiC added Ag paste.
  • Keywords
    microassembling; nanoparticles; power semiconductor devices; silicon compounds; silver; sintering; wide band gap semiconductors; Ag; Ag paste; SiC; bonding strength; die attachment; direct bonding; low pressure sintering; low temperature sintering; nanoparticles; organic solvent; power devices; Bonding; Conductivity; Joints; Resistance; Silicon carbide; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics System-Integration Technology Conference (ESTC), 2014
  • Conference_Location
    Helsinki
  • Type

    conf

  • DOI
    10.1109/ESTC.2014.6962832
  • Filename
    6962832