DocumentCode
160181
Title
Nano-SiC added Ag paste sintering die-attach for SiC power devices
Author
Hao Zhang ; Nagao, Shijo ; Park, Soojin ; Koga, Shunsuke ; Sugahara, Tohru ; Suganuma, Katsuaki
Author_Institution
Inst. of Sci. & Ind. Res., Osaka Univ., Ibaraki, Japan
fYear
2014
fDate
16-18 Sept. 2014
Firstpage
1
Lastpage
4
Abstract
Low temperature and low pressure sintering Ag paste composed by sub-micro Ag particle and organic solvent was presented. The apparent improvement of bonding strength was realized by adding small amount of nano thickness Ag flake. Optimum proportion of sub-micro particle and nano thickness flake was determined. Nano-SiC particles were added into the optimized paste for sake of the possibility of properties advancement. The electrical property of newly developed Ag paste was measured by an improved test method. SiC die attachment and DBC (Direct Bonding Cu) substrate was conducted to test the practical application prospect of newly developed Nano-SiC added Ag paste.
Keywords
microassembling; nanoparticles; power semiconductor devices; silicon compounds; silver; sintering; wide band gap semiconductors; Ag; Ag paste; SiC; bonding strength; die attachment; direct bonding; low pressure sintering; low temperature sintering; nanoparticles; organic solvent; power devices; Bonding; Conductivity; Joints; Resistance; Silicon carbide; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics System-Integration Technology Conference (ESTC), 2014
Conference_Location
Helsinki
Type
conf
DOI
10.1109/ESTC.2014.6962832
Filename
6962832
Link To Document