Effect of gate engineering in FinFET for RF applications

Author

Sivasankaran, K. ; Chitroju, T.R.K.K. ; Reddy, K. Sai Anurag ; Subrahmanyam, M. Sai ; Harsha, M. Viswanath Sri ; Mallik, P.S.

Author_Institution

Sch. of Electron. & Eng., VIT Univ., Vellore, India

fYear

2014

fDate

9-11 Jan. 2014

Firstpage

1

Lastpage

6

Abstract

This paper presents the Radio Frequency Performance of gate engineered FinFET. Gate engineering is process of implementing different materials with different work functions on gate of device, and studying its impact on device operation. We have analyzed the capability of Single Material Gate (SMG), Dual Material Gate (DMG) and Triple Material Gate (TMG) gate FinFET for RF performance characteristics. We have used 3-D device simulation to extract the RF figure of merits such as transconductance generation factor (g_m/I_d), cut-off frequency (f_t) and maximum oscillation frequency (f_max). The effect of different gate length ratios has also been reported. The result shows that TMG-FinFET exhibit superior RF performance as compared to SMG and DMG- FinFET.

Keywords

MOSFET; work function; 3D device simulation; DMG- FinFET; RF figure of merits; RF performance characteristics; SMG FinFET; TMG-FinFET; cut-off frequency; dual material gate; gate engineering effect; gate length ratio; maximum oscillation frequency; radio frequency performance; single material gate; transconductance generation factor; triple material gate; work functions; Cutoff frequency; Educational institutions; FinFETs; Logic gates; Materials; Performance evaluation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Electrical Engineering (ICAEE), 2014 International Conference on

Conference_Location

Vellore

Type

conf

DOI

10.1109/ICAEE.2014.6838455

Filename

6838455