• DocumentCode
    1601989
  • Title

    Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors

  • Author

    Miranda, E. ; Sune, Jordi ; Kawanago, T. ; Kakushima, K. ; Iwai, Hisato

  • Author_Institution
    Dept. d´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain
  • fYear
    2013
  • Firstpage
    257
  • Lastpage
    260
  • Abstract
    A simple analytic model for the post-breakdown conduction characteristics in W/La2O3/p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (IG) as a function of the gate (VG) and drain (VD) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.
  • Keywords
    MOSFET; electric breakdown; lanthanum compounds; semiconductor device models; silicon; La2O3; MOS transistor; Si; Si MOSFET; dielectric breakdown; drain voltage; gate current; generalized diode equation; post-breakdown IG-VG-VD characteristic; post-breakdown conduction characteristic; ramped voltage stress; transistor drain region; Equations; Logic gates; MOSFETs; Mathematical model; Resistance; Silicon; MOS; breakdown; reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2013 Spanish Conference on
  • Conference_Location
    Valladolid
  • Print_ISBN
    978-1-4673-4666-5
  • Electronic_ISBN
    978-1-4673-4667-2
  • Type

    conf

  • DOI
    10.1109/CDE.2013.6481391
  • Filename
    6481391
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1601989