• DocumentCode
    1602334
  • Title

    Degradation signatures of high power laser diodes

  • Author

    Jimenez, Joaquin ; Anaya, Jose Javier ; Hortelano, Vanesa ; Souto, J. ; Martin-Martin, A.

  • Author_Institution
    Dto. de Fis. de la Materia Condensada, Univ. de Valladolid, Valladolid, Spain
  • fYear
    2013
  • Firstpage
    309
  • Lastpage
    312
  • Abstract
    Rapid and catastrophic degradation of high power laser diodes occur because of the generation of extended defects inside the active parts of the laser structure during the laser operation. Local hot spots play a major role as actuators of the driven force leading to the formation of extended crystal defects. The laser power threshold for degradation is very sensitive to the packaging induced stress, and the thermal conductivity of the multilayer structure. The thermal conductivity of the QW and the barriers is suppressed by the low dimensionality but also by the quality of the interfaces being a major actor of the laser diode degradation. Modelling the thermal stresses induced by the hot spots in the active region of the diode permits to describe the degradation mechanisms of high power laser diodes.
  • Keywords
    actuators; electronics packaging; extended defects; laser beams; optical multilayers; quantum well lasers; thermal conductivity; thermal stresses; QW laser; active region; actuators; catastrophic degradation; extended crystal defects; high power laser diodes; interface quality; laser diode degradation; laser operation; laser power threshold; laser structure; local hot spots; multilayer structure; packaging induced stress; thermal conductivity; thermal stresses; Degradation; Diode lasers; Laser modes; Power lasers; Semiconductor lasers; Stress; Thermal stresses; Laser diodes; degradation; thermal conductivity; thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2013 Spanish Conference on
  • Conference_Location
    Valladolid
  • Print_ISBN
    978-1-4673-4666-5
  • Electronic_ISBN
    978-1-4673-4667-2
  • Type

    conf

  • DOI
    10.1109/CDE.2013.6481404
  • Filename
    6481404