DocumentCode
1602334
Title
Degradation signatures of high power laser diodes
Author
Jimenez, Joaquin ; Anaya, Jose Javier ; Hortelano, Vanesa ; Souto, J. ; Martin-Martin, A.
Author_Institution
Dto. de Fis. de la Materia Condensada, Univ. de Valladolid, Valladolid, Spain
fYear
2013
Firstpage
309
Lastpage
312
Abstract
Rapid and catastrophic degradation of high power laser diodes occur because of the generation of extended defects inside the active parts of the laser structure during the laser operation. Local hot spots play a major role as actuators of the driven force leading to the formation of extended crystal defects. The laser power threshold for degradation is very sensitive to the packaging induced stress, and the thermal conductivity of the multilayer structure. The thermal conductivity of the QW and the barriers is suppressed by the low dimensionality but also by the quality of the interfaces being a major actor of the laser diode degradation. Modelling the thermal stresses induced by the hot spots in the active region of the diode permits to describe the degradation mechanisms of high power laser diodes.
Keywords
actuators; electronics packaging; extended defects; laser beams; optical multilayers; quantum well lasers; thermal conductivity; thermal stresses; QW laser; active region; actuators; catastrophic degradation; extended crystal defects; high power laser diodes; interface quality; laser diode degradation; laser operation; laser power threshold; laser structure; local hot spots; multilayer structure; packaging induced stress; thermal conductivity; thermal stresses; Degradation; Diode lasers; Laser modes; Power lasers; Semiconductor lasers; Stress; Thermal stresses; Laser diodes; degradation; thermal conductivity; thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location
Valladolid
Print_ISBN
978-1-4673-4666-5
Electronic_ISBN
978-1-4673-4667-2
Type
conf
DOI
10.1109/CDE.2013.6481404
Filename
6481404
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