Microelectronic actuator for power systems protection

Author

Singh, J. ; Kalam, A. ; Faulkner, M.

Author_Institution

Sch. of Commun. & Inf., Victoria Univ. of Technol., Melbourne, Vic., Australia

Volume

1

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

40

Abstract

Design and performance of a very high speed, low power microelectronic actuator chip for power systems protection is presented. The mixed analog-digital integrated circuit is designed using Gallium Arsenide (GaAs) E-D MESFET technology. A cellular design methodology was used to give the design flexibility, which allows it to be easily cascaded into multi-bit chip. HSPICE simulation results indicates power dissipation of 256.3 milliwatts. The results indicate large logic swings resulting in an excellent noise margins and a very high-speed operation enabling reliable multifunction operation of this chip

Keywords

III-V semiconductors; MESFET integrated circuits; SPICE; gallium arsenide; high-speed integrated circuits; low-power electronics; microactuators; mixed analogue-digital integrated circuits; power system protection; 256.3 mW; GaAs; HSPICE simulation; cellular design; gallium arsenide E-D MESFET technology; high-speed low-power microelectronic actuator chip; logic swing; mixed analog-digital integrated circuit; multifunction operation; noise; power system protection; Actuators; Circuit simulation; Design methodology; Gallium arsenide; Integrated circuit technology; MESFET integrated circuits; Microelectronics; Mixed analog digital integrated circuits; Power system protection; Power system simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, 1999. IECON '99 Proceedings. The 25th Annual Conference of the IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-5735-3

Type

conf

DOI

10.1109/IECON.1999.822166

Filename

822166