• DocumentCode
    1603346
  • Title

    Design and simulation of molecular single-electron resistive switches

  • Author

    Simonian, Nikita ; Mayr, Andreas ; Likharev, Konstantin K.

  • Author_Institution
    Dept. of Phys. & Astron., Stony Brook Univ., Stony Brook, NY, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving as a single-electron trap. To verify our design, we have performed transport simulations based on the ab-initio calculation of molecules´ electronic structure, and the general theory of single-electron tunneling. Our results show that molecular assemblies with a length below 10 nm and a footprint area of about 5 nm2 may combine millisecond-scale switching times with multi-year retention times, as well as high (>; 103) ON/OFF current ratios, at a room temperature. Moreover, Monte Carlo simulations of self-assembled-monolayers (SAM) of the designed molecules show that such monolayers may be also used as resistive switches, with comparable characteristics, and as an addition, a substantial tolerance to fabrication defects and random offset charges.
  • Keywords
    Monte Carlo methods; molecular electronics; single electron devices; switches; tunnelling; Monte Carlo simulations; millisecond-scale switching times; molecular single-electron resistive switches; multiyear retention times; parallel electrostatically-coupled molecules; self-assembled-monolayers; single-electron transistor; single-electron trap; single-electron tunneling; Approximation methods; Electronic mail; Switches; USA Councils; DFT; SAM; Single-electronics; ab-initio calculations; molecular device; nonvolatile memory; resistive switch;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
  • Conference_Location
    Birmingham
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4673-2198-3
  • Type

    conf

  • DOI
    10.1109/NANO.2012.6322157
  • Filename
    6322157