• DocumentCode
    1606271
  • Title

    Optimization of Al2O3 Interpoly Dielectric for Embedded Flash Memory Applications

  • Author

    Wellekens, Dirk ; De Vos, J. ; Van Houdt, J.

  • Author_Institution
    IMEC, Leuven
  • fYear
    2008
  • Firstpage
    12
  • Lastpage
    15
  • Abstract
    In this work we present a thorough investigation of A1203 for use as an interpoly dielectric layer in flash memory devices. By exploring several optimization steps A1203 proves to be an excellent material for embedded flash applications. It is shown that a 17nm A1203 layer in combination with a high temperature post-deposition anneal and either a poly or (TiN) metal gate can provide excellent program/erase performance, data retention, program/erase cycling and data retention after cycling.
  • Keywords
    embedded systems; flash memories; Al2O3; data retention; embedded flash application; embedded flash memory device; interpoly dielectric layer; Aluminum oxide; Annealing; Channel bank filters; Chemical technology; Dielectric devices; Dielectric materials; Flash memory; Nonvolatile memory; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
  • Conference_Location
    Opio
  • Print_ISBN
    978-1-4244-1546-5
  • Electronic_ISBN
    978-1-4244-1547-2
  • Type

    conf

  • DOI
    10.1109/NVSMW.2008.9
  • Filename
    4531809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1606271