DocumentCode
1606839
Title
C-Flash: An Ultra-Low Power Single Poly Logic NVM
Author
Roizin, Y. ; Aloni, E. ; Birman, A. ; Dayan, V. ; Fenigstein, A. ; Nahmad, D. ; Pikhay, E. ; Zfira, D.
Author_Institution
Tower Semicond. Ltd., Migdal HaEmek
fYear
2008
Firstpage
90
Lastpage
92
Abstract
An ultra-low power logic NVM has currents <10 nA/cell in all operating regimes, high programming/erase speeds, excellent endurance/retention and allows strong Vdd fluctuations. The memory uses CMOS inverter read-out principle (C-Flash) and F-N injection for programming and erase with voltages below +5 V. The memory is intended for RFID and advanced mobile applications requiring small/middle sized embedded memory modules.
Keywords
CMOS logic circuits; flash memories; logic gates; radiofrequency identification; CMOS inverter read-out principle; RFID; advanced mobile applications; embedded memory modules; ultralow power single poly logic NVM; CMOS logic circuits; Capacitors; Inverters; Leakage current; Logic programming; Nonvolatile memory; Prototypes; Testing; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Semiconductor Memory Workshop, 2008 and 2008 International Conference on Memory Technology and Design. NVSMW/ICMTD 2008. Joint
Conference_Location
Opio
Print_ISBN
978-1-4244-1546-5
Electronic_ISBN
978-1-4244-1547-2
Type
conf
DOI
10.1109/NVSMW.2008.32
Filename
4531832
Link To Document