• DocumentCode
    1607607
  • Title

    High quality oxide thin film depositions using a sol-gel method

  • Author

    Uchiyama, K. ; Fukunaga, D. ; Fujii, T. ; Shiosaki, T.

  • Author_Institution
    Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama-cho 8916-5, Ikoma, 630-0192, JAPAN
  • Volume
    3
  • fYear
    2008
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    High quality lanthanum-modified lead zirconate titanate (PLZT) and strontium titanate (STO) thin films were deposited on sapphire substrates using an advanced sol-gel method. This new deposition technique brought high quality epitaxial growth of PLZT thin films on r-cut sapphire and STO thin films on c-cut sapphires. The PLZT film showed high electro-optic (EO) coefficients that were almost comparable to those of bulk PLZTs. In turn, doped STO thin films showed less conductivity compared to that of bulk. This may come from the existence of the grain boundaries in the STO thin films. Further improvement is under investigation in order to achieve higher conductivity of the STO thin films
  • Keywords
    Conductivity; Crystallization; Electrooptic devices; Electrooptic modulators; Scanning electron microscopy; Sputtering; Substrates; Titanium compounds; Transistors; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
  • Conference_Location
    Santa Re, NM, USA
  • ISSN
    1099-4734
  • Print_ISBN
    978-1-4244-2744-4
  • Electronic_ISBN
    1099-4734
  • Type

    conf

  • DOI
    10.1109/ISAF.2008.4693864
  • Filename
    4693864