DocumentCode
1607607
Title
High quality oxide thin film depositions using a sol-gel method
Author
Uchiyama, K. ; Fukunaga, D. ; Fujii, T. ; Shiosaki, T.
Author_Institution
Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama-cho 8916-5, Ikoma, 630-0192, JAPAN
Volume
3
fYear
2008
Firstpage
1
Lastpage
2
Abstract
High quality lanthanum-modified lead zirconate titanate (PLZT) and strontium titanate (STO) thin films were deposited on sapphire substrates using an advanced sol-gel method. This new deposition technique brought high quality epitaxial growth of PLZT thin films on r-cut sapphire and STO thin films on c-cut sapphires. The PLZT film showed high electro-optic (EO) coefficients that were almost comparable to those of bulk PLZTs. In turn, doped STO thin films showed less conductivity compared to that of bulk. This may come from the existence of the grain boundaries in the STO thin films. Further improvement is under investigation in order to achieve higher conductivity of the STO thin films
Keywords
Conductivity; Crystallization; Electrooptic devices; Electrooptic modulators; Scanning electron microscopy; Sputtering; Substrates; Titanium compounds; Transistors; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the
Conference_Location
Santa Re, NM, USA
ISSN
1099-4734
Print_ISBN
978-1-4244-2744-4
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2008.4693864
Filename
4693864
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