Effect of Sr substitution on tunability and dielectric properties in Pb(Zr0.50Ti0.50)O3 thin films fabricated by chemical solution deposition

Author

Karan, N.K. ; Pradhan, D.K. ; Saavedra-Arias, J.J. ; Murari, N.M. ; Thomas, Robert ; Katiyar, R S. ; Sudheendran, K. ; Raju, K.C.J.

Author_Institution

Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P O Box 23343, 00931, USA

Volume

3

fYear

2008

Firstpage

1

Lastpage

3

Abstract

(Pb1??xSrx)(Zr0.5Ti0.5)O3 ( x= 0 to 0.65) thin films were grown on Pt/TiO2/SiO2/Si substrates by chemical solution deposition. Films were crystallized in the single phase perovskite structure in the temperature range ( 550??700??C). Dielectric constant and loss tangent at room temperature reduced as the percentage of Sr substitution increased at the A-site of this perovskite structure. The phase transition temperature (Tc) lowered with Sr-substitution and Tc below the room temperature was obtained for composition with Sr ?? 40%. The room temperature tunability reduced with Sr substitution, however, the k-factor slightly improved.

Keywords

Chemicals; Crystallization; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Semiconductor thin films; Sputtering; Strontium; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2008. ISAF 2008. 17th IEEE International Symposium on the

Conference_Location

Santa Re, NM, USA

ISSN

1099-4734

Print_ISBN

978-1-4244-2744-4

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2008.4693868

Filename

4693868