DocumentCode
1608418
Title
Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology
Author
Mistry, Khyati ; Armstrong, M. ; Auth, C. ; Cea, S. ; Coan, T. ; Ghani, T. ; Hoffmann, T. ; Murthy, A. ; Sandford, J. ; Shaheed, R. ; Zawadzki, K. ; Zhang, K. ; Thompson, S. ; Bohr, M.
Author_Institution
Portland Technol. Dev., Intel Corp., Hillsboro, OR, USA
fYear
2004
Firstpage
50
Lastpage
51
Abstract
We describe the device physics of uniaxial strained silicon transistors. Uniaxial strain is more effective, less costly and easier to implement. The highest PMOS drive current to date is reported: 0.72mA/ μm. Pattern sensitivity and mobility/Rext partitioning are discussed. Finally we measure inverter delays as low as 4.6pS, and show 50Mb SRAMs operational at 0.65V.
Keywords
CMOS integrated circuits; MOSFET; VLSI; elemental semiconductors; hole mobility; silicon; 0.65 V; 50 Mbit; 50Mb SRAMs; 90 nm; 90nm CMOS technology; Si; highest PMOS drive current; mobility/Rext partitioning; pattern sensitivity; uniaxial strained Si transistors; CMOS technology; Compressive stress; Costs; Degradation; Delay; MOS devices; MOSFETs; Silicon; Tensile stress; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8289-7
Type
conf
DOI
10.1109/VLSIT.2004.1345387
Filename
1345387
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