Molecular dynamics and electrical simulation of a novel GaN/4H-SiC hetero-structure optically triggered vertical NPN device

In this paper, an atomistic molecular dynamics followed by an electrical simulation study is made to study the turn-on and turn-off characteristics, gain, and breakdown voltage of an optically triggered GaN/4H-SiC hetero-structure vertical NPN device with 1 nm AlN as the buffer layer and the results are compared with the optically triggered all-4H-SiC NPN device. The optically triggered GaN/4H-SiC hetero-structure provides better switching characteristics, however, the breakdown strength of all-4H-SiC NPN device shows better results than GaN/4H-SiC device because of high critical field strength of 4H-SiC material.