A Simplified Hybrid Orientation Technology (SHOT) for high performance CMOS

Author

Doris, B. ; Zhang, Y. ; Fried, D. ; Beintner, J. ; Dokumaci, O. ; Natzle, W. ; Zhu, H. ; Boyd, D. ; Holt, J. ; Petrus, J. ; Yates, J.T. ; Dyer, T. ; Saunders, P. ; Steen, M. ; Nowak, E. ; Ieong, M.

Author_Institution

tMicroelectronics Div., IBM Corp., Hopewell Junction, NY, USA

fYear

2004

Firstpage

86

Lastpage

87

Abstract

A new concept in high performance VLSI called Simplified Hybrid Orientation Technology (SHOT) is introduced. This novel process flow creates circuits with independently oriented surface channels for pMOS and nMOS by integrating FinFETs with planar Ultra-Thin SOI (UTSOI) MOSFETs for the first time. The unique CMOS structure enables high mobility surface channel orientation for both devices. The SHOT scheme is also capable of producing PDSOI devices on the same chip. pFinFET drive current is among the best results reported (810 μA/μm at V_dd = 1.2V).

Keywords

CMOS integrated circuits; MOSFET; nanotechnology; silicon-on-insulator; Simplified Hybrid Orientation Technology; VLSI; high performance CMOS; independently oriented surface channels; CMOS technology; Circuits; Dry etching; FinFETs; Lithography; MOS devices; MOSFETs; Oxidation; Process design; Research and development;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8289-7

Type

conf

DOI

10.1109/VLSIT.2004.1345408

Filename

1345408