Polycrystalline Si films on glass substrates prepared by metal induced crystallization

Author

Dimova-Malinovska, D. ; Angelov, O. ; Sendova-Vassileva, M. ; Grigorov, V. ; Pivin, J.C.

Author_Institution

Central Lab. for Solar Energy & New Energy Sources, Bulgarian Acad. of Sci., Sofia, Bulgaria

Volume

3

fYear

2004

Firstpage

530

Abstract

Metal induced crystallization of amorphous Si (a-Si) has been studied for different deposited structures and different metal concentrations λass/a-Si/Al, glass/Al/a-Si+Al and glass/a-Si+Ni. The structures were deposited at different substrate temperatures by RF magnetron sputtering and were isothermally annealed at temperatures below that of the a-Si solid phase crystallization. The annealing was performed in air, N₂ or in vacuum. Raman spectroscopy and Rutherford Back-scattering were used to study the crystallinity of the resulting poly-Si films.

Keywords

Raman spectra; Rutherford backscattering; amorphous semiconductors; annealing; crystallisation; doping profiles; elemental semiconductors; semiconductor thin films; silicon; sputter deposition; N₂; N₂ annealing; RF magnetron sputtering; Raman spectroscopy; Rutherford back-scattering; Si-Al; Si:Al-Al; Si:Ni; a-Si; air annealing; amorphous Si; glass substrates; glass/Al/a-Si+Al structure; glass/a-Si+Ni structure; glass/a-Si/Al structure; isothermal anneal temperature; metal concentrations; metal induced crystallization; poly-Si films; polycrystalline Si films; substrate temperatures; vacuum annealing; Amorphous magnetic materials; Amorphous materials; Annealing; Crystallization; Glass; Radio frequency; Raman scattering; Semiconductor films; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2004. 27th International Spring Seminar on

Print_ISBN

0-7803-8422-9

Type

conf

DOI

10.1109/ISSE.2004.1490871

Filename

1490871