• DocumentCode
    1609373
  • Title

    Dielectric breakdown mechanism of HfSiON/SiO2 gate dielectric

  • Author

    Torii, Kentaro ; Aoyama, T. ; Kamiyama, S. ; Tamura, Y. ; Miyazaki, S. ; Kitajima, H. ; Arikado, T.

  • Author_Institution
    Semicond. Leading Edge Technol., Ibaraki, Japan
  • fYear
    2004
  • Firstpage
    112
  • Lastpage
    113
  • Abstract
    The breakdown mechanism of HfSiON/SiO2 gate stacks is discussed, based on studies of the band diagram, carrier separation and charge pumping measurements. We found that both holes and electrons contribute to BD and therefore the combination of the stress polarity and the device type should be chosen carefully to evaluate the reliability.
  • Keywords
    band structure; electric breakdown; hafnium compounds; integrated circuit reliability; interface states; silicon compounds; HfSiON-SiO2; HfSiON/SiO2 gate dielectric; band diagram; carrier separation; charge pumping measurements; dielectric breakdown mechanism; stress polarity; Breakdown voltage; Charge carrier processes; Dielectric breakdown; Electric breakdown; Electron traps; Etching; Gate leakage; MOCVD; Paper technology; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
  • Print_ISBN
    0-7803-8289-7
  • Type

    conf

  • DOI
    10.1109/VLSIT.2004.1345423
  • Filename
    1345423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1609373