DocumentCode
1609501
Title
Physics-based modeling of electromagnetic parasitic effects in interconnects and busbars
Author
Wachutka, Gerhard ; Böhm, Peter
Author_Institution
Inst. for Phys. of Electrotechnol., Munich Univ. of Technol., Munich, Germany
fYear
2010
Firstpage
313
Lastpage
316
Abstract
The 3D-simulation of electromagnetic fields and current flow in real-life interconnect structures enables the detailed analysis of parasitic inductive effects and, thus, provides the basis for the optimization of bus bars in high power modules.
Keywords
busbars; electromagnetic fields; interconnections; busbars; electromagnetic fields; electromagnetic parasitic effects; high power modules; interconnect structures; parasitic inductive effects; physics-based modeling; Current density; Current distribution; Electric potential; Inductance; Mathematical model; Transient analysis; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices & Microsystems (ASDAM), 2010 8th International Conference on
Conference_Location
Smolenice
Print_ISBN
978-1-4244-8574-1
Type
conf
DOI
10.1109/ASDAM.2010.5666364
Filename
5666364
Link To Document