New InP based pHEMT double stage differential to single-ended MMIC low noise amplifiers for SKA

A series of room temperature operating double stage differential to single-ended MMIC low noise amplifiers (LNA) design are presented in this work and are based on novel high breakdown InGaAs/InAlAs/InP pHEMTs that have been developed and fabricated at the University of Manchester. All designs are optimised for the frequency range of 0.3 to 1.4GHz in line with the Square Kilometre Array (SKA) requirements. A noise figure of less than 0.5dB with unconditional stability over the entire frequency band of interest is achieved for large periphery gate transistors. Very low power dissipation of 190mW are expected for these design. LNA designs as well as the test mechanisms have been verified by performing simulations in Agilent ADS. Both the double stage differential to single-ended LNAs are being fabricated.