Numerical optimization of SiNx antireflection coatings for crystalline silicon on glass solar cells

Author

Beye, M. ; Faye, M.E. ; Ndiaye, A. ; Maiga, A.S.

Author_Institution

Dept. of Appl. Phys., Univ. Gaston Berger, St. Louis, Senegal

fYear

2013

Firstpage

368

Lastpage

372

Abstract

The transfer matrix method is used to calculate the reflectance of a crystalline silicon on glass solar cell with a silicon nitride layer (SiN_x) as antireflection coating (ARC). It is found that a SiN_x double-layer ARC has little advantage over the single layer one. Among all SiN_x double layer structures, the refractive index (and thickness) combination of 2.1 (35 nm) and 2.3 (40 nm) for the top and the bottom layer, respectively, is found to provide the highest short circuit current density (J_sc). The influence of the angle of incidence on the reflectance is also studied. The numerical optimization procedure and its results are presented.

Keywords

antireflection coatings; current density; elemental semiconductors; glass; matrix algebra; numerical analysis; optimisation; silicon; silicon compounds; solar cells; ARC; Si; SiN_x; antireflection coating; crystalline silicon glass solar cell; double layer structure; numerical optimization procedure; reflectance calculation; refractive index; short circuit current density; size 35 nm; size 40 nm; transfer matrix method; Coatings; Glass; Optimization; Photovoltaic cells; Reflectivity; Refractive index; Silicon; Silicon nitride; antireflection coating; double layer; single layer;

fLanguage

English

Publisher

ieee

Conference_Titel

Clean Energy and Technology (CEAT), 2013 IEEE Conference on

Conference_Location

Lankgkawi

Print_ISBN

978-1-4799-3237-5

Type

conf

DOI

10.1109/CEAT.2013.6775658

Filename

6775658