DocumentCode
1610805
Title
Selectively-formed high mobility SiGe-on-Insulator pMOSFETs with Ge-rich strained surface channels using local condensation technique
Author
Tezuka, Taro ; Nakaharai, Shu ; Moriyama, Yoshihiko ; Sugiyama, Naoharu ; Takagi, Shin-ichi
Author_Institution
MIRAI-ASET, Univ. of Tokyo, Kawasaki, Japan
fYear
2004
Firstpage
198
Lastpage
199
Abstract
A new approach to selectively form strained SiGe-on-Insulator (SGOI) channel transistors with very high Ge fraction on an SOI substrate is demonstrated. This method consists of epitaxial growth of SiGe layer with low Ge fraction and local oxidation processes. The obtained SGOI-pMOSFET with a Ge fraction of 93% has exhibited mobility enhancement up to 10 times. The thickness scalability of the SGOI channels was also confirmed down to 5 nm.
Keywords
Ge-Si alloys; MOSFET; carrier mobility; semiconductor-insulator boundaries; 5 nm; Ge-rich strained surface channels; SiGe; epitaxial growth; local condensation technique; selectively-formed high mobility SiGe-on-Insulator pMOSFETs; Capacitive sensors; Epitaxial growth; Fabrication; Germanium silicon alloys; MISFETs; MOSFET circuits; Oxidation; Scalability; Silicon germanium; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on
Print_ISBN
0-7803-8289-7
Type
conf
DOI
10.1109/VLSIT.2004.1345477
Filename
1345477
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