• DocumentCode
    161141
  • Title

    Optimization of DC-sputtered molybdenum back contact layers

  • Author

    Jhong-Hao Jiang ; Shou-Yi Kuo

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
  • fYear
    2014
  • fDate
    7-10 May 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The Mo back contact layers were deposited by DC sputtering to investigate into that optimization the properties for CIGS solar cells. The working pressure and thickness of Mo thin films were varied during deposited process. When the working pressure at 1.5 mtorr and thickness of Mo thin films at 1000 nm, the properties of Mo thin films were best. The FWHM about 0.5° and electrical resistivity can arrive about 2.5 × 10-5 Ω-cm.
  • Keywords
    copper compounds; electrical resistivity; gallium compounds; indium compounds; semiconductor thin films; solar cells; sputter deposition; ternary semiconductors; CIGS solar cells; Cu(InGa)Se2-Mo; DC-sputtered molybdenum back contact layers; FWHM; electrical resistivity; thin films; Adhesives; Films; Grain size; Optimization; Photovoltaic cells; Resistance; Sputtering; CIGS solr cell; DC sputtering; Mo back contact layers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2014 International Symposium on
  • Conference_Location
    Kwei-Shan
  • Type

    conf

  • DOI
    10.1109/ISNE.2014.6839351
  • Filename
    6839351
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=161141