Charge-injection length in silicon nanocrystal memory cells

Author

Osabe, T. ; Ishii, T. ; Mine, T. ; Sano, T. ; Arigane, T. ; Fukumura, T. ; Kurata, H. ; Saeki, S. ; Ikeda, Y. ; Yano, K.

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

fYear

2004

Firstpage

242

Lastpage

243

Abstract

We present the first experimental investigation of the lateral charge-injection length for silicon nanocrystal memory cells programmed with source-side injection (SSI). Charge-pumping measurements reveal that the injection length of SSI programming is reducible to 24 nm and suggest the possibility of scaling down the nanocrystal memory for 2-bit/cell operation to the 90-65-nm range of technology nodes.

Keywords

elemental semiconductors; nanostructured materials; semiconductor storage; silicon; 24 nm; 90 to 65 nm; Si; Si nanocrystal memory cells; charge-injection length; injection length; source-side injection; Character generation; Current measurement; Electrons; Length measurement; Nanocrystals; Nonvolatile memory; Scalability; Semiconductor films; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2004. Digest of Technical Papers. 2004 Symposium on

Print_ISBN

0-7803-8289-7

Type

conf

DOI

10.1109/VLSIT.2004.1345503

Filename

1345503

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1611451