Patterned quantum dot molecule laser fabricated by electron beam lithography and wet chemical etching

Author

Verma, V.B. ; Reddy, U. ; Dias, N.L. ; Bassett, K.P. ; Li, X. ; Coleman, J.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

fYear

2010

Firstpage

143

Lastpage

144

Abstract

This study demonstrates the use of electronically coupled patterned quantum dots (QDs) fabricated using a wet-etching technique as the gain medium of a photonic device. This technique provides the unique ability to control both the spatial and spectral properties of QDs, while maintaining the high optical quality of the material necessary for photonics applications.

Keywords

III-V semiconductors; aluminium compounds; electron beam lithography; energy states; etching; gallium arsenide; indium compounds; photoluminescence; quantum dot lasers; superradiance; 2D planar growth; 3D quantum confinement; GaAs; GaAs-Al_0.75Ga_0.25As-GaAs-In_0.21Ga_0.79As; amplified spontaneous emission spectrum; discrete energy states; edge-emitting laser; electron beam lithography; patterned quantum dot molecule laser; photoluminescence; spatial properties; spectral properties; vertically-coupled self-aligned quantum dots; wet chemical etching; Chemical lasers; Electron beams; Gallium arsenide; Lithography; Quantum computing; Quantum dot lasers; Quantum well lasers; Self-assembly; Semiconductor lasers; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE

Conference_Location

Majorca

Print_ISBN

978-1-4244-5240-8

Electronic_ISBN

978-1-4244-5241-5

Type

conf

DOI

10.1109/PHOTWTM.2010.5421923

Filename

5421923