DocumentCode
1611856
Title
Resonant Si/Ge avalanche photodiode with an ultrahigh gain bandwidth product
Author
Bowers, John E. ; Dai, Daoxin ; Zaoui, W.S. ; Kang, Yimin ; Morse, Mike
Author_Institution
ECE Dept., Univ. of California, Santa Barbara, CA, USA
fYear
2010
Firstpage
111
Lastpage
112
Abstract
A resonant Ge/Si APD with the SACM (separate-absorption-charge-multiplication) structure is presented. Due to the resonance effect in the avalanche region, the Ge/Si APD shows an ultra-high gain-band products (GBP) (860 GHz). This may make it possible to generate electrical data directly without a TIA (trans-impedance-amplifier). Consequently, the receiver based on the resonant Ge/Si APD may be cheaper, smaller and lower power than existing approaches.
Keywords
avalanche photodiodes; elemental semiconductors; germanium; high-speed optical techniques; inhomogeneous media; optical receivers; photodetectors; silicon; Si-Ge; electrical data; optical receiver; photodetectors; resonant avalanche photodiode; separate-absorption-charge-multiplication; ultrahigh gain bandwidth; Avalanche photodiodes; Bandwidth; Resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE
Conference_Location
Majorca
Print_ISBN
978-1-4244-5240-8
Electronic_ISBN
978-1-4244-5241-5
Type
conf
DOI
10.1109/PHOTWTM.2010.5421935
Filename
5421935
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