• DocumentCode
    1612128
  • Title

    Simulation of acoustic semiconductors signature of cracked surface

  • Author

    Hamdi, F. ; Bouhedja, S.

  • Author_Institution
    Dept of Electron., Univ. Mentouri, Constantine, Algeria
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Nondestructive control simulation is a means of assessing the ability of methods to detect or characterize quickly and simply defects. In acoustic microscopy, the micro-characterization of the key materials used in the manufacture of electronics applications, is studying the basic parameters characterizing the mechanical properties of these materials by analyzing acoustic signatures, V (z). This last is evaluated by using a numerical simple approach in this work. So to study the effect of crack, located on the silicon surface, on the propagation of Rayleigh waves, we first apply the Schoch model to calculate the variation of the reflection coefficient modulus and second the sheppard-wilson model in order to simulate and then analyze V (z) by using the fast Fourier transform (F.F.T) spectrum.
  • Keywords
    Fourier transform spectra; Rayleigh waves; acoustic microscopy; acoustic wave propagation; crack detection; crystal defects; elemental semiconductors; fast Fourier transforms; microcracks; silicon; FFT spectrum; Rayleigh wave propagation; Schoch model; Sheppard-Wilson model; Si; acoustic microscopy; acoustic semiconductor signature; crack detection; defect detection; fast Fourier transform spectrum; mechanical properties; microcharacterization; nondestructive control simulation; reflection coefficient modulus; silicon surface; Microscopy; Reflection; Silicon; Surface acoustic waves; Surface cracks; Rayleigh waves; Silicon; acoustic signature; cracked surface; fast Fourier transform; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Communications and Photonics Conference (SIECPC), 2011 Saudi International
  • Conference_Location
    Riyadh
  • Print_ISBN
    978-1-4577-0068-2
  • Electronic_ISBN
    978-1-4577-0067-5
  • Type

    conf

  • DOI
    10.1109/SIECPC.2011.5876998
  • Filename
    5876998