DocumentCode
1612130
Title
Broadband 110 GHz on-wafer interconnects built in CMOS-compatible membrane technology
Author
Arz, Uwe ; Rohland, Martina ; Kuhlmann, Karsten ; Büttgenbach, Stephanus
Author_Institution
Phys.-Tech. Bundesanstalt, Braunschweig, Germany
fYear
2011
Firstpage
1110
Lastpage
1113
Abstract
We present a broadband transition from a contact structure built on highly-conductive silicon to a coplanar waveguide (CPW) fabricated in membrane technology. Test structures were fabricated and measured in a frequency range from 0.1 to 110 GHz. The measured propagation constant of the membrane CPW agrees well with analytical calculations in the entire frequency band.
Keywords
CMOS integrated circuits; coplanar waveguides; electrical contacts; elemental semiconductors; integrated circuit interconnections; silicon; CMOS-compatible membrane technology; broadband on-wafer interconnects; broadband transition; contact structure; coplanar waveguide fabrication; frequency 0.1 GHz to 110 GHz; frequency 110 GHz; frequency band; highly-conductive silicon; membrane CPW; membrane technology; Calibration; Coplanar waveguides; Frequency measurement; Impedance; Silicon; Substrates; Transmission line measurements; Membrane technology; calibration standard; coplanar waveguide; interconnect; on-wafer measurement; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2011 Asia-Pacific
Conference_Location
Melbourne, VIC
Print_ISBN
978-1-4577-2034-5
Type
conf
Filename
6173950
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