DocumentCode
1612138
Title
Properties study of the heterostructure CdS — CdO
Author
Shindov, Peter ; Kakanakov, Rumen ; Philippov, Philipp ; Anastasova, Teodora ; Kaneva, Svetlana
Author_Institution
Tech. Univ. Sofia, Plovdiv, Bulgaria
fYear
2008
Firstpage
523
Lastpage
525
Abstract
The effect of the pulsed - laser annealing on the parameters of CdS thin layers in the medium of oxygen was studied. The CdS thin layers were deposited by spray pyrolysis and surface treatment by nanosecond pulses of XeCl - laser. The changes in the layers were characterized by SEM, XRD and XPS. The results showed that a change in the morphology of the surface occurred; a by-surface layer consisted of CdO with high transparency and conductivity is formed in consequence of oxidation of CdS. These results are discussed in the context of window layers in solar cells.
Keywords
II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; cadmium compounds; oxidation; pyrolysis; scanning electron microscopy; semiconductor heterojunctions; semiconductor thin films; solar cells; surface morphology; surface treatment; transparency; wide band gap semiconductors; CdS-CdO; SEM; XPS; XRD; XeCl-laser; high transparency; oxidation; pulsed-laser annealing; semiconductor heterostructure; solar cells; spray pyrolysis; surface morphology; surface treatment; thin layers; Annealing; Conductivity; Optical pulses; Oxidation; Pulsed laser deposition; Spraying; Surface emitting lasers; Surface morphology; Surface treatment; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology, 2008. ISSE '08. 31st International Spring Seminar on
Conference_Location
Budapest
Print_ISBN
978-1-4244-3972-0
Electronic_ISBN
978-1-4244-3974-4
Type
conf
DOI
10.1109/ISSE.2008.5276622
Filename
5276622
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